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MMST4403-7-F

MMST4403-7-F

MMST4403-7-F

Diodes Incorporated

MMST4403-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMST4403-7-F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-600mA
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMST4403
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-750mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Turn Off Time-Max (toff) 255ns
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:30743 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.037601$0.037601
500$0.027648$13.824
1000$0.023040$23.04
2000$0.021138$42.276
5000$0.019755$98.775
10000$0.018377$183.77
15000$0.017772$266.58
50000$0.017475$873.75

MMST4403-7-F Product Details

MMST4403-7-F Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of -750mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).The part has a transition frequency of 200MHz.Input voltage breakdown is available at 40V volts.A maximum collector current of 600mA volts is possible.

MMST4403-7-F Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMST4403-7-F Applications


There are a lot of Diodes Incorporated MMST4403-7-F applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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