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2N5400RA

2N5400RA

2N5400RA

Rochester Electronics, LLC

2N5400RA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N5400RA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 400MHz
RoHS StatusROHS3 Compliant
In-Stock:190444 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.04000$0.04
500$0.0396$19.8
1000$0.0392$39.2
1500$0.0388$58.2
2000$0.0384$76.8
2500$0.038$95

2N5400RA Product Details

2N5400RA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.This product comes in a TO-92-3 device package from the supplier.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.

2N5400RA Features


the DC current gain for this device is 40 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of TO-92-3

2N5400RA Applications


There are a lot of Rochester Electronics, LLC 2N5400RA applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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