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2N5883

2N5883

2N5883

Microsemi Corporation

Bipolar Transistors - BJT Power BJT

SOT-23

2N5883 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingLead, Tin
Mount Through Hole
Transistor Element Material SILICON
PackagingBulk
Published 2005
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code8541.29.00.95
Max Power Dissipation200W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 25A
JEDEC-95 Code TO-3
DC Current Gain-Min (hFE) 20
RoHS StatusNon-RoHS Compliant
In-Stock:188 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$39.28050$3928.05

About 2N5883

The 2N5883 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - BJT Power BJT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N5883, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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