FZT651TC Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.A collector emitter saturation voltage of 430mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 300mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).175MHz is present in the transition frequency.A maximum collector current of 3A volts can be achieved.
FZT651TC Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 175MHz
FZT651TC Applications
There are a lot of Diodes Incorporated FZT651TC applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
