2SB1732TL Overview
DC current gain in this device equals 270 @ 200mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -85mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at -1.5A in order to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 400MHz.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SB1732TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 400MHz
2SB1732TL Applications
There are a lot of ROHM Semiconductor 2SB1732TL applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
