ZTX853STZ Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 160mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 400mA, 4A.A constant collector voltage of 4A is necessary for high efficiency.The emitter base voltage can be kept at 6V for high efficiency.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.130MHz is present in the transition frequency.A maximum collector current of 4A volts can be achieved.
ZTX853STZ Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 200mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 130MHz
ZTX853STZ Applications
There are a lot of Diodes Incorporated ZTX853STZ applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
