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2N5881

2N5881

2N5881

Microsemi Corporation

Bipolar Transistors - BJT NPN Transistor

SOT-23

2N5881 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Number of Pins 3
Transistor Element Material SILICON
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Max Power Dissipation160W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 15A
Current - Collector (Ic) (Max) 15A
DC Current Gain-Min (hFE) 20
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:174 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$39.28050$3928.05

About 2N5881

The 2N5881 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - BJT NPN Transistor.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N5881, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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