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MMBTA56Q-13-F

MMBTA56Q-13-F

MMBTA56Q-13-F

Diodes Incorporated

MMBTA56Q-13-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBTA56Q-13-F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Max Power Dissipation310mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 310mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 50MHz
Frequency - Transition 50MHz
RoHS StatusROHS3 Compliant
In-Stock:170466 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.04000$0.04
500$0.0396$19.8
1000$0.0392$39.2
1500$0.0388$58.2
2000$0.0384$76.8
2500$0.038$95

MMBTA56Q-13-F Product Details

MMBTA56Q-13-F Overview


DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).There is a transition frequency of 50MHz in the part.In extreme cases, the collector current can be as low as 500mA volts.

MMBTA56Q-13-F Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz

MMBTA56Q-13-F Applications


There are a lot of Diodes Incorporated MMBTA56Q-13-F applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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