NJVMJD32CT4G Overview
In this device, the DC current gain is 25 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.The maximum collector current is 3A volts.
NJVMJD32CT4G Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
NJVMJD32CT4G Applications
There are a lot of ON Semiconductor NJVMJD32CT4G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
