2SC6043-AE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.There is a breakdown input voltage of 50V volts that it can take.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SC6043-AE Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
2SC6043-AE Applications
There are a lot of ON Semiconductor 2SC6043-AE applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
