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2N4233A

2N4233A

2N4233A

Microsemi Corporation

2N4233A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N4233A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-66
Number of Pins 3
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation75W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Frequency 4MHz
Pin Count2
JESD-30 Code O-MBFM-P2
Number of Elements 1
Polarity NPN
Power Dissipation75W
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 25
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:301 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$27.22420$2722.42

2N4233A Product Details

2N4233A Overview


An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

2N4233A Features


the emitter base voltage is kept at 5V

2N4233A Applications


There are a lot of Microsemi Corporation 2N4233A applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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