IXYH50N120C3D1

Name: IXYH50N120C3D1
Brand: IXYS
SKU: IXYH50N120C3D1
Price: 13.33000 USD
Availability: InStock

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Manufacturer part number:IXYH50N120C3D1

Manufacturer:IXYS

Description:IXYH50N120C3D1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available on our website

Case Package:SOT-23

Datasheet:IXYH50N120C3D1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	625W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	625W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	24 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	240 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	90A
Reverse Recovery Time	195ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	4.2V
Turn On Time	82 ns
Test Condition	600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 50A
Turn Off Time-Nom (toff)	372 ns
Gate Charge	142nC
Current - Collector Pulsed (Icm)	210A
Td (on/off) @ 25°C	28ns/133ns
Switching Energy	3mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	21.46mm
Length	16.26mm
Width	5.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free