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FGA25N120ANTDTU-F109

FGA25N120ANTDTU-F109

FGA25N120ANTDTU-F109

ON Semiconductor

FGA25N120ANTDTU-F109 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA25N120ANTDTU-F109 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation312W
Base Part Number FGA25N120A
Rise Time-Max 90ns
Element ConfigurationSingle
Input Type Standard
Power - Max 312W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 350 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A
IGBT Type NPT and Trench
Gate Charge200nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 50ns/190ns
Switching Energy 4.1mJ (on), 960μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 180ns
Height 18.9mm
Length 15.8mm
Width 5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1671 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.63000$3.63
10$3.27400$32.74
450$2.57187$1157.3415
900$2.31998$2087.982

FGA25N120ANTDTU-F109 Product Details

FGA25N120ANTDTU-F109 Description


The 1200V NPT IGBT delivers outstanding conduction and switching characteristics, great avalanche robustness, and simple parallel operation thanks to ON Semiconductor's exclusive trench design and innovative NPT technology. For applications like induction heating and soft switching, such as microwave ovens, this device is ideally suited.



FGA25N120ANTDTU-F109 Features


  • NPT Trench Technology, Positive Temperature Coefficient

  • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C

  • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C

  • Extremely Enhanced Avalanche Capability



FGA25N120ANTDTU-F109 Applications


  • Induction Heating

  • Microwave Oven


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