FDN359AN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDN359AN Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
46mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
2.7A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
46m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
480pF @ 10V
Current - Continuous Drain (Id) @ 25°C
2.7A Ta
Gate Charge (Qg) (Max) @ Vgs
7nC @ 5V
Rise Time
13ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
2.7A
Threshold Voltage
1.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
1.6 V
Height
1.12mm
Length
2.92mm
Width
3.05mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:12872 items
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FDN359AN Product Details
FDN359AN Description
The FDN359AN is a Logic Level PowerTrench MOSFET with a 30V N-Channel. Fairchild Semiconductor's innovative PowerTrench technology is used to make this N-Channel Logic Level MOSFET, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance. These devices are ideal for low-voltage and battery-powered applications that demand little in-line power loss and quick switching.
FDN359AN Features
Very fast switching.
Low gate charge (5nC typical).
2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V RDS(ON) = 0.060 W @ VGS = 4.5 V.
High power version of industry-standard SOT-23 package. Identical pinout to SOT-23 with 30% higher power handling capability.
FDN359AN Applications
Battery Powered Circuits
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