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IXTA3N110

IXTA3N110

IXTA3N110

IXYS

MOSFET N-CH 1100V 3A TO-263

SOT-23

IXTA3N110 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 4.5Ohm
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 150W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss) 1100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 1.1kV
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 700 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2047 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$28.170848$28.170848
10$26.576271$265.76271
100$25.071954$2507.1954
500$23.652787$11826.3935
1000$22.313950$22313.95

About IXTA3N110

The IXTA3N110 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 1100V 3A TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTA3N110, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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