IKD15N60RF Description
The IKD15N60RF is an IGBT with integrated diode in packages offering space-saving advantages. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IKD15N60RF Features
Maximum junction temperature 175°C
Short circuit capability of 5μs
Best in class current versus package size performance
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant (solder temperature 260°C, MSL1)
Optimized Eon, Eoff and Qrr for low switching losses
Operating range of 4 to 30kHz
Smooth switching performance leading to low EMI levels
Very tight parameter distribution
IKD15N60RF Applications
Domestic and industrial drives:
