Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SPD01N60C3BTMA1

SPD01N60C3BTMA1

SPD01N60C3BTMA1

Infineon Technologies

Trans MOSFET N-CH 600V 0.8A 3-Pin(2+Tab) TO-252

SOT-23

SPD01N60C3BTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 11W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation11W
Case Connection DRAIN
Turn On Delay Time30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Rise Time25ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 800mA
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage600V
Drain Current-Max (Abs) (ID) 0.8A
Drain-source On Resistance-Max 6Ohm
Avalanche Energy Rating (Eas) 20 mJ
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:1140 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.110446$0.110446
10$0.104194$1.04194
100$0.098296$9.8296
500$0.092732$46.366
1000$0.087483$87.483

About SPD01N60C3BTMA1

The SPD01N60C3BTMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 600V 0.8A 3-Pin(2+Tab) TO-252.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SPD01N60C3BTMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News