Name: AUIRFS4610
Brand: Infineon Technologies
SKU: AUIRFS4610
Availability: InStock

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AUIRFS4610

Manufacturer part number:AUIRFS4610

Manufacturer:Infineon Technologies

Description:AUIRFS4610 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFS4610 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3550pF @ 50V
Current - Continuous Drain (Id) @ 25°C	73A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	87ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	73A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	290A
Nominal Vgs	2 V
Height	4.83mm
Length	10.67mm
Width	11.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRFS4610 Product Details

AUIRFS4610 Description

AUIRFS4610, developed by Infineon Technologies, emerges as a member of the P-channel HEXFET? power MOSFET series specifically designed for automotive applications. Low on-resistance per silicon area can be realized based on advanced processing techniques. Its fast switching speed, ruggedized device design, and logic-level gate drive ensure high flexibility and reliability. As a result, AUIRFR5505 is extremely efficient for electronic designers to use in a wide range of applications.