Name: FDG313N
Brand: ON Semiconductor
SKU: FDG313N
Availability: InStock

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FDG313N

Manufacturer part number:FDG313N

Manufacturer:ON Semiconductor

Description:FDG313N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDG313N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	450mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	950mA
Number of Elements	1
Power Dissipation-Max	750mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750mW
Turn On Delay Time	3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	950mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.3nC @ 4.5V
Rise Time	8.5ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	950mA
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.95A
Drain to Source Breakdown Voltage	25V
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

FDG313N Product Details

FDG313N Description

FDG313N is a type of N-Channel enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology. It shows excellent performance in lowering on-state resistance on the basis of this technology. It acts as a replacement for bipolar digital transistor and small-signal MOSFET in low voltage applications.