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PHB55N03LTA,118

PHB55N03LTA,118

PHB55N03LTA,118

NXP USA Inc.

MOSFET N-CH 25V 55A D2PAK

SOT-23

PHB55N03LTA,118 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 1997
Series TrenchMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 85W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:1557 items

About PHB55N03LTA,118

The PHB55N03LTA,118 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 25V 55A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PHB55N03LTA,118, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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