SIGC25T60NCX1SA7 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC25T60NCX1SA7 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
30A
Test Condition
300V, 30A, 8.2Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 30A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
21ns/110ns
RoHS Status
ROHS3 Compliant
In-Stock:2760 items
SIGC25T60NCX1SA7 Product Details
SIGC25T60NCX1SA7 Description
The SIGC25T60NCX1SA7 is an IGBT Chip in NPT-technology. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).
SIGC25T60NCX1SA7 Features
Positive temperature coefficient
Easy paralleling
600V NPT technology
100μm chip
SIGC25T60NCX1SA7 Applications
Drives
Consumer electronics
Industrial technology
The energy sector
Aerospace electronic devices
Transportation
Related Products
Similar Transistors - IGBTs - Single from Infineon Technologies and other manufacturers
