STGF20V60DF Description
This STGF20V60DF is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT STGF20V60DF offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.
STGF20V60DF Features
High-speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short-circuit rated
Ultrafast soft recovery antiparallel diode
STGF20V60DF Applications
Automotive
Hybrid, electric & powertrain systems
Industrial
Building automation
Enterprise systems
Enterprise machine