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SIGC12T60SNCX7SA2

SIGC12T60SNCX7SA2

SIGC12T60SNCX7SA2

Infineon Technologies

SIGC12T60SNCX7SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC12T60SNCX7SA2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-55°C~150°C TJ
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 10A
Test Condition 400V, 10A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
IGBT Type NPT
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 29ns/266ns
RoHS StatusROHS3 Compliant
In-Stock:3148 items

SIGC12T60SNCX7SA2 Product Details

SIGC12T60SNCX7SA2 Description

SIGC12T60SNCX7SA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC12T60SNCX7SA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

SIGC12T60SNCX7SA2 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SIGC12T60SNCX7SA2 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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