Name: STGWA25S120DF3
Brand: STMicroelectronics
SKU: STGWA25S120DF3
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	375W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGWA25
Input Type	Standard
Power - Max	375W
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	50A
Reverse Recovery Time	265 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 25A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 25A
IGBT Type	Trench Field Stop
Gate Charge	80nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	31ns/147ns
Switching Energy	830μJ (on), 2.37mJ (off)
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

STGWA25S120DF3 Product Details

STGWA25S120DF3 Description

This STGWA25S120DF3 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWA25S120DF3 is part of the S series of 1200 V IGBTs which is tailored to maximize the efficiency of low-frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor STGWA25S120DF3 is in the TO-247 package with 375W power dissipation.