SIGC07T60SNCX1SA3 Description
IGBT Chip. An Insulated Gate Bipolar Transistor is a BJT that is built in a way that allows for fast switching with low power losses, making it ideal for use as a switch in high power circuits. It is commonly packaged along with a flyback (also called freewheeling) diode, which prevents damage from inductive kickback.
SIGC07T60SNCX1SA3 FEATURES
· 600V NPT technology
· 100μm chip
· short circuit prove
· positive temperature coefficient
· easy paralleling
SIGC07T60SNCX1SA3 Applications
· drives
