SIGC18T60UNX1SA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
SIGC18T60UNX1SA1 Features
? 30% lower Eoff compared to previous generation
? Short circuit withstand time – 10 μs
? Designed for operation above 30 kHz
? NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
? High ruggedness, temperature stable behaviour
? Pb-free lead plating; RoHS compliant
? Qualified according to JEDEC1
for target applications
SIGC18T60UNX1SA1 Applications
·Induction cooking
nverterized microwave ovens
·Resonant converters
