SIGC12T60NCX7SA2 Description
SIGC12T60NCX7SA2 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC12T60NCX7SA2 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC12T60NCX7SA2 has the common source configuration.
SIGC12T60NCX7SA2 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC12T60NCX7SA2 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
