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IRG7CH28UEF

  • IRG7CH28UEF - IRG7CH28UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
  • IRG7CH28UEF - IRG7CH28UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

IRG7CH28UEF

IRG7CH28UEF

Infineon Technologies

IRG7CH28UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7CH28UEF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Operating Temperature-40°C~175°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Collector Emitter Voltage (VCEO) 1.55V
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.55V @ 15V, 2.5A
Gate Charge60nC
Td (on/off) @ 25°C 35ns/225ns
RoHS StatusRoHS Compliant
In-Stock:2852 items

IRG7CH28UEF Product Details

IRG7CH28UEF Description


A INSULATED GATE BIPOLAR TRANSISTOR is IRG7CH28UEF.



IRG7CH28UEF Features


  • high switching frequencies and efficiency across a wide range of applications

  • Higher power capability and robust hard switching performance result in improved reliability.

  • excellent parallel operation with current sharing



IRG7CH28UEF Applications


  • Electric Heating

  • The use of microwaves

  • Welding equipment

  • Applications for Soft Switching

  • Drives for motors

  • UPS

  • Inverters for HEV


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