Name: IRLR3114ZPBF
Brand: Infineon Technologies
SKU: IRLR3114ZPBF
Availability: InStock

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IRLR3114ZPBF

Manufacturer part number:IRLR3114ZPBF

Manufacturer:Infineon Technologies

Description:IRLR3114ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR3114ZPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	4.9MOhm
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Power Dissipation	140W
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.9m Ω @ 42A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3810pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 4.5V
Rise Time	140ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	130A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	40V
Recovery Time	45 ns
Height	2.3876mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRLR3114ZPBF Product Details

IRLR3114ZPBF Description

Modern manufacturing methods are used in the IRLR3114ZPBF HEXFET? Power MOSFET to produce an incredibly low on-resistance per silicon area. A 175??C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.