Name: IRGS4640DPBF
Brand: Infineon Technologies
SKU: IRGS4640DPBF
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Input Type	Standard
Power - Max	250W
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	65A
Reverse Recovery Time	89 ns
Collector Emitter Breakdown Voltage	600V
Test Condition	400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 24A
Gate Charge	75nC
Current - Collector Pulsed (Icm)	72A
Td (on/off) @ 25°C	41ns/104ns
Switching Energy	115μJ (on), 600μJ (off)
RoHS Status	RoHS Compliant

IRGS4640DPBF Product Details

IRGS4640DPBF Description

IRGS4640DPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor that is used to provide high efficiency in a wide range of applications. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Improved Reliability can be ensured due to rugged hard switching performance and higher power capability.