SIGC10T60EX1SA5 Description
SIGC10T60EX1SA5 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC10T60EX1SA5 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC10T60EX1SA5 has the common source configuration.
SIGC10T60EX1SA5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC10T60EX1SA5 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
