Description
The IHW20N120R2 is a Reverse Conducting IGBT with a monolithic body diode. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Features
? NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
? Low EMI
? Qualified according to JEDEC1 for target applications
? Pb-free lead plating; RoHS compliant
? Powerful monolithic Body Diode with very low forward voltage
? Body diode clamps negative voltages
? TrenchStop and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Applications
? Inductive Cooking
? Soft Switching Applications
? Power transistor
? Consumer electronics
? Industrial technology
? The energy sector
