Name: STGB30H60DF
Brand: STMicroelectronics
SKU: STGB30H60DF
Availability: InStock

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STGB30H60DF

Manufacturer part number:STGB30H60DF

Manufacturer:STMicroelectronics

Description:STGB30H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB30H60DF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	-40°C~175°C TJ
Packaging	Cut Tape (CT)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	260W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGB30
Element Configuration	Single
Input Type	Standard
Power - Max	260W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	60A
Reverse Recovery Time	110 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
IGBT Type	Trench Field Stop
Gate Charge	105nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	50ns/160ns
Switching Energy	350μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max	20V
RoHS Status	ROHS3 Compliant

STGB30H60DF Product Details

STGB30H60DF Description

This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. This IGBT series maximizes the efficiency of very high frequency converters by providing the ideal balance between conduction and switching losses. Additionally, an easier paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very tight parameter distribution.