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IRGPF40F

IRGPF40F

IRGPF40F

Infineon Technologies

IRGPF40F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGPF40F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2017
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 160W
Voltage - Collector Emitter Breakdown (Max) 900V
Current - Collector (Ic) (Max) 31A
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 17A
RoHS StatusNon-RoHS Compliant
In-Stock:4324 items

IRGPF40F Product Details

IRGPF40F Description


IRGPF40F is a type of insulated gate bipolar transistor provided by Infineon Technologies for medium operating frequency (1 to 10kHz). Compared with other bipolar transistors, IRGPF40F features higher usable current densities and simpler gate-drive requirements of the familiar power MOSFET. It is primarily designed for high-voltage, high-current applications.



IRGPF40F Features


Higher usable current densities

Simpler gate-drive requirements

Switching-loss rating includes all "tail" losses

Available in the TO-247AC package



IRGPF40F Applications


High-voltage, high-current applications


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