IRGP6660DPBF Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.
IRGP6660DPBF Applications
? Welding
? H Bridge Converters
IRGP6660DPBF Features
Low VcEon)and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5us short circuit SOA
Positive VCE(ON)temperature coefficient Lead-free.RoHS compliant
