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IHP10T120

IHP10T120

IHP10T120

Infineon Technologies

IHP10T120 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHP10T120 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2009
Series TrenchStop®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation138W
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 138W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 16A
Reverse Recovery Time 185 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time69 ns
Test Condition 610V, 10A, 81 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Turn Off Time-Nom (toff) 769 ns
IGBT Type Trench Field Stop
Gate Charge53nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 45ns/520ns
Switching Energy 1.46mJ
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2339 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.935645$1.935645
10$1.826080$18.2608
100$1.722717$172.2717
500$1.625205$812.6025
1000$1.533212$1533.212

IHP10T120 Product Details

IHP10T120 Features

Short circuit withstand time – 10μs

Designed for :

- Soft Switching Applications

- Induction Heating

TrenchStop and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature-stable behavior

- easy parallel switching capability due to positive

temperature coefficient in VCE(sat)

- Very low Vce(sat)

Very soft, fast recovery anti-parallel EmCon? HE diode

Low EMI

Qualified according to JEDEC1 for target applications

Application-specific optimization of inverse diode

Pb-free lead plating; RoHS compliant


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