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IRGP35B60PDPBF

IRGP35B60PDPBF

IRGP35B60PDPBF

Infineon Technologies

IRGP35B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP35B60PDPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2000
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional FeatureHIGH RELIABILITY, LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation308W
Current Rating60A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation308W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time26 ns
Transistor Application POWER CONTROL
Rise Time6ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 110 ns
Collector Emitter Voltage (VCEO) 2.55V
Max Collector Current 60A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.85V
Turn On Time34 ns
Test Condition 390V, 22A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 35A
Turn Off Time-Nom (toff) 142 ns
IGBT Type NPT
Gate Charge160nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 26ns/110ns
Switching Energy 220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1351 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.67000$6.67
10$6.02800$60.28
100$4.99060$499.06
500$4.34576$2172.88

IRGP35B60PDPBF Product Details

Description


The IRGP35B60PDPBF is a warp2 series IGBT with an ultrafast soft recovery diode. What is the purpose of a recovery diode? In most cases, rapid recovery diodes are employed for rectification. A low-frequency AC (sine) signal becomes a DC signal when it is converted. The time duration of a low-frequency signal is long. This indicates that the signal will take longer to complete its cycle.



Features


? Minimal Tail Current

? HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

? Tighter Distribution of Parameters

? Higher Reliability

? NPT Technology, Positive Temperature Coefficient

? Lower VCE(SAT)

? Lower Parasitic Capacitances



Applications


? Uninterruptable Power Supplies

? Consumer Electronics Power Supplies

? Lead-Free

? Telecom and Server SMPS

? PFC and ZVS SMPS Circuits


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