IRGP6690D-EPBF Description
IRGP6690D-EPBF transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP6690D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGP6690D-EPBF has the common source configuration.
IRGP6690D-EPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGP6690D-EPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
