STGB30V60F Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGB30V60F Features
Maximum junction temperature: Tj= 175 °C
Tail-less switching off
VcE(sat)
= 1.85 V (Typ.)@Ic= 30 A.
Tight parameters distribution
Safe paralleling
Low thermal resistance
STGB30V60F Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
