NGTB40N120IHLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB40N120IHLWG Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
260W
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
260W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
80A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.9V
Test Condition
600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 40A
Turn Off Time-Nom (toff)
565 ns
IGBT Type
Trench Field Stop
Gate Charge
420nC
Current - Collector Pulsed (Icm)
320A
Td (on/off) @ 25°C
-/360ns
Switching Energy
1.4mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
21.08mm
Length
16.26mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3832 items
NGTB40N120IHLWG Product Details
NGTB40N120IHLWG Description
This Insulated Gate Bipolar Transistor (IGBT) offers outstanding performance in demanding switching applications, giving both low on-state voltage and minimum switching loss. It is constructed with a durable and economical Field Stop (FS) Trench. Applications requiring resonant or gentle switching are ideally suited for the IGBT. A robust co-packaged free-wheeling diode with a low forward voltage is incorporated into the gadget.
NGTB40N120IHLWG Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are Pb?Free Devices
NGTB40N120IHLWG Applications
Inductive Heating
Consumer Appliances
Soft Switching
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