IRG4RC10SDTRRP Features
Extremely low voltage drop 1.1V(Typ) @ 2A
S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
Tight parameter distribution
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry-standard TO-252AA package
IRG4RC10SDTRRP Benefits
Generation 4 IGBTs offer the highest efficiencies available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's. Minimized recovery characteristics require less/no snubbing
Lower losses than MOSFET's conduction and Diode losses
