IRGBC30U Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
IRGBC30U Features
The switching-loss rating includes all "tail" losses
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for the Current vs. Frequency curve
