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FGH30N6S2D

FGH30N6S2D

FGH30N6S2D

ON Semiconductor

FGH30N6S2D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH30N6S2D Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation167W
Current Rating45A
Polarity NPN
Element ConfigurationSingle
Power Dissipation167W
Input Type Standard
Power - Max 167W
Rise Time17ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 45A
Reverse Recovery Time 46 ns
Collector Emitter Breakdown Voltage600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 45A
Collector Emitter Saturation Voltage2.5V
Test Condition 390V, 12A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Gate Charge23nC
Current - Collector Pulsed (Icm) 108A
Td (on/off) @ 25°C 6ns/40ns
Switching Energy 55μJ (on), 100μJ (off)
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3904 items

FGH30N6S2D Product Details

FGH30N6S2D Description

The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, and Low Plateau Voltage SMPS II IGBTs combine the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times, and UIS capability are essential.



FGH30N6S2D Features

100kHz Operation at 390V, 14A

200kHZ Operation at 390V, 9A

600V Switching SOA Capability

Typical Fall Time. ........90nsatTJ= 125%C

Low Gate Charge... 23nC at Vce= 15V

Low Plateau Village ......... .6.5V Typical

UIS Rated

150mJ

Low Conduction Loss



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