IRGB6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGB6B60KDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
90W
Current Rating
13A
Number of Elements
1
Element Configuration
Single
Power Dissipation
90W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
MOTOR CONTROL
Rise Time
17ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
13A
Reverse Recovery Time
70 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
45 ns
Test Condition
400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 5A
Turn Off Time-Nom (toff)
258 ns
IGBT Type
NPT
Gate Charge
18.2nC
Current - Collector Pulsed (Icm)
26A
Td (on/off) @ 25°C
25ns/215ns
Switching Energy
110μJ (on), 135μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
Fall Time-Max (tf)
27ns
Height
15.24mm
Length
10.54mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4432 items
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Quantity
Unit Price
Ext. Price
IRGB6B60KDPBF Product Details
IRGB6B60KDPBF Description
The IRGB6B60KDPBF is a bipolar transistor with an ultrafast soft recovery diode and an insulated gate. It has a low VCE (on) non-punch and ultra-soft diode reverse recovery properties thanks to IGBT technology.
IRGB6B60KDPBF Features
Lead-Free
Low Diode VF.
Square RBSOA.
10μs Short Circuit Capability.
Positive VCE (on) Temperature Coefficient.
Ultrasoft Diode Reverse Recovery Characteristics.
Low VCE (on) Non-Punch Through IGBT Technology.
IRGB6B60KDPBF Applications
Lighting
Alternative Energy
Power Management
Motor Drive & Control
Consumer Electronics
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