IRGPH50F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGPH50F Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AC
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2017
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
200W
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
45A
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 25A
RoHS Status
Non-RoHS Compliant
In-Stock:2500 items
IRGPH50F Product Details
IRGPH50F Description
IRGPH50F is a radiation hardened power MOSFET. International Rectifier's RADHard HEXFETE technology provides high performance power MOSFETs for space applications. The power MOSFET IRGPH50F has over a decade of proven performance and reliability in satellite applications. The Infineon IRGPH50F has been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
IRGPH50F Features
Simple Drive Requirements Low Total Gate Charge Proton Tolerant Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Single Event Effect (SEE) Hardened Low RDS(on)
IRGPH50F Applications
geosynchronous and geostationary orbit Medium Earth Orbit (MEO) Low Earth Orbit (LEO) DC to DC converters motor control
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