Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STGP3NB60HD

STGP3NB60HD

STGP3NB60HD

STMicroelectronics

STGP3NB60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP3NB60HD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation50W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating6A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGP3
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation50W
Input Type Standard
Transistor Application MOTOR CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 10A
Reverse Recovery Time 45ns
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.8V
Turn On Time16 ns
Test Condition 480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Turn Off Time-Nom (toff) 168 ns
Gate Charge21nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 5ns/53ns
Switching Energy 33μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3419 items

Pricing & Ordering

QuantityUnit PriceExt. Price

STGP3NB60HD Product Details

STGP3NB60HD Description

STGP3NB60HD transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGP3NB60HD MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics STGP3NB60HD has the common source configuration.

STGP3NB60HD Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

STGP3NB60HD Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


Get Subscriber

Enter Your Email Address, Get the Latest News