IRGS6B60KDTRLP Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRGS6B60KDTRLP Features
? IGBT technology with low VCE (on) and no punch through.
? Low VF Diode.
? Short Circuit Capability of 10 s.
? RBSOA in Square.
? Reverse Recovery Characteristics of Ultrasoft Diodes.
? A positive temperature coefficient for the VCE (on).
? Free of lead
IRGS6B60KDTRLP Applications
Switching applications
