IRG8CH137K10F Description
IRG8CH137K10F is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in wide range of applications. Due to its 10 μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tight parameter distribution. A maximum junction temperature of 175°C ensures increased reliability.
IRG8CH137K10F Features
10μs short circuit SOA
Square RBSOA
Positive VCE(ON) temperature coefficient
Low VCE(ON) and switching losses
Tight parameter distribution
IRG8CH137K10F Applications
Industrial motor drives
UPS
HEV inverter
Welding
