IRG7CH73UED-R Description
IRG7CH73UED-R is a 1200V Insulated-gate bipolar transistor. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
IRG7CH73UED-R Features
With pulse-width modulation and low-pass filters
Four alternating layers
High-current and low-saturation-voltage capability
Constructed similarly to an n-channel vertical-construction power MOSFET
The second most widely used power transistor
IRG7CH73UED-R Applications
Consumer electronics
Industrial technology
The energy sector
Aerospace electronic devices
Transportation
