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IRGC49B120UB

IRGC49B120UB

IRGC49B120UB

Infineon Technologies

IRGC49B120UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGC49B120UB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case Die
Surface MountYES
Transistor Element Material SILICON
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional FeatureULTRA FAST
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-XUUC-N
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 50A
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 10A
IGBT Type NPT
Gate-Emitter Thr Voltage-Max 6V
RoHS StatusROHS3 Compliant
In-Stock:4455 items

IRGC49B120UB Product Details

IRGC49B120UB Description


This IGBT gadget was developed employing a cutting-edge trench gate and field stop structure. It is a brand-new "HB" series IGBT, which denotes the best conduction and switching loss trade-off for any frequency converter. A fairly limited parameter distribution and a modestly positive VCE(sat) temperature coefficient also result in safer paralleling operation.



IRGC49B120UB Features


  • Applications for LDO (Linear) and DDR are fairly prevalent.

  • employs a bus terminators interface IC.



IRGC49B120UB Applications


Switching applications


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